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Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II–VI Semiconductor Epi
Effect of Ge content on diode parameters of superstrate type Cu2ZnSn1−xGexS4/CdS heterostructures prepared by all-solution process,Journal of Materials Science - X-MOL
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High-sensitivity and self-driven photodetectors based on Ge–CdS core–shell heterojunction nanowires via atomic layer deposition - CrystEngComm (RSC Publishing)
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Figure 2 from Near-infrared photoluminescence enhancement in Ge/CdS and Ge/ZnS Core/shell nanocrystals: utilizing IV/II-VI semiconductor epitaxy. | Semantic Scholar
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